PASSIVATION OF WIDE BAND-GAP BASED SEMICONDUCTOR DEVICES WITH HYDROGEN-FREE SPUTTERED NITRIDES

摘要

PROBLEM TO BE SOLVED: To improve passivation in a field effect transistor formed in the Group III nitride material system. SOLUTION: For the improvement of passivation in the field effect transistor formed in the Group III nitride material system, a two-part structure in which a chemical vapor deposited passivation layer of silicon nitride encapsulates a previously sputtered-deposited layer of silicon nitride is provided. The sputtered layer provides some of the benefits of passivation and the chemical vapor deposited layer provides an excellent environmental barrier. COPYRIGHT: (C)2009,JPO&INPIT