发明名称 |
SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
Almost in the center of the light-receiving surface of an embedded photodiode (31), a floating diffusion (331) is formed and the gate electrode of a transfer transistor (32) is so disposed as to surround it. The impurity concentration (or depth) in the p+-type semiconductor region, n-type semiconductor region or p-type well region of the photodiode (31) is so inclined from the periphery toward the center as to form a potential gradient inclined downward from the periphery toward the center when applying a proper bias voltage to a pn junction. Photoelectric charges generated by receiving light are integrated in the center speedily according to the potential gradient. Since a maximum moving distance from the periphery of the photodiode (31) to the floating diffusion (331) is also short, the photoelectric charge can efficiently be collected even when a period for accumulating the photoelectric charges is short. Thus, detection sensitivity is improved by efficiently utilizing the photoelectric charges generated by the photodiode (31). |
申请公布号 |
WO2009031304(A1) |
申请公布日期 |
2009.03.12 |
申请号 |
WO2008JP02428 |
申请日期 |
2008.09.04 |
申请人 |
TOHOKU UNIVERSITY;SHIMADZU CORPORATION;SUGAWA, SHIGETOSHI;KONDO, YASUSHI;TOMINAGA, HIDEKI |
发明人 |
SUGAWA, SHIGETOSHI;KONDO, YASUSHI;TOMINAGA, HIDEKI |
分类号 |
H01L27/146;H04N5/335;H04N5/374;H04N5/3745 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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