| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent both generation of a side lobe and generation of a resist defect even when using a halftone phase shift mask having a plurality of apertures in different dimensions. <P>SOLUTION: A first aperture 13A having a first dimension S1 and a second aperture 13B having a second dimension S2 larger than the first dimension S1 are formed in a halftone part 12 formed on a transparent substrate 11. A light shielding part 14 is provided in the periphery of the second aperture 13B on the transparent substrate 11. <P>COPYRIGHT: (C)2009,JPO&INPIT |
