发明名称 |
SEMICONDUCTOR DEVICE HAVING RESISTIVE ELEMENT, AND METHOD OF FORMING THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device relatively stably maintained during manufacturing processes and including a resistive element having a predictable resistance value, and to provide a method of forming the same. <P>SOLUTION: The semiconductor device includes a substrate including a first region and a second region. At least one gate structure is on the substrate in the first region, and the one first gate structure includes a first gate insulating film and a first gate electrode film on the first gate insulating film. <P>COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2009055029(A) |
申请公布日期 |
2009.03.12 |
申请号 |
JP20080214470 |
申请日期 |
2008.08.22 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
SHIN JINHYUN;CHO SEONG-SOON;KIM MIN-CHUL;CHOI SEUNGWOOK |
分类号 |
H01L21/822;H01L21/8247;H01L27/04;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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