发明名称 SEMICONDUCTOR DEVICE HAVING RESISTIVE ELEMENT, AND METHOD OF FORMING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device relatively stably maintained during manufacturing processes and including a resistive element having a predictable resistance value, and to provide a method of forming the same. <P>SOLUTION: The semiconductor device includes a substrate including a first region and a second region. At least one gate structure is on the substrate in the first region, and the one first gate structure includes a first gate insulating film and a first gate electrode film on the first gate insulating film. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009055029(A) 申请公布日期 2009.03.12
申请号 JP20080214470 申请日期 2008.08.22
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 SHIN JINHYUN;CHO SEONG-SOON;KIM MIN-CHUL;CHOI SEUNGWOOK
分类号 H01L21/822;H01L21/8247;H01L27/04;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/822
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