| 摘要 |
PROBLEM TO BE SOLVED: To downsize and integrate a semiconductor device having resistive elements. SOLUTION: On a surface of a semiconductor substrate, an epitaxial layer having a conductivity type opposite to the semiconductor substrate is formed, trenches are formed in parts other than parts used for resistance, and the resistive elements separated from one another are three-dimensionally formed by embedding an insulation film in the trenches. COPYRIGHT: (C)2009,JPO&INPIT |
