| 摘要 |
A method for manufacturing a compound semiconductor structure, includes (a) selecting a conductive SiC substrate in accordance with color and resistivity and (b) epitaxially growing a GaN series compound semiconductor layer on the selected conductive SiC substrate. The step (a) preferably selects a conductive SiC substrate whose main color is green, whose conductivity type is n-type and whose resistivity is 0.08 Omegacm to 1x105 Omegacm, or whose main color is black, whose conductivity type is p-type and whose resistivity is 1x103 Omegacm to 1x105 Omegacm, or whose main color is blue, whose conductivity type is p-type and whose resistivity is 10 Omegacm to 1x105 Omegacm. The step (b) preferably includes (b-1) growing an AlInGaN layer having a thickness not thinner than 10 mum on the conductive SiC substrate by hydride VPE.
|
