Electronic devices comprising HV transistors and LV transistors, with salicided junctions

摘要

An integrated electronic device with a silicon substrate (1) having low-voltage regions (19) and high-voltage regions (13) therein.
Low-voltage transistors (70) are in the LV regions and high-voltage transistors (71) are in the HV regions.
The transistors are different in respect of the silicidation of source and drain regions.
Each LV transistor has silicided source, gate and drain (55,57a1,57a2) and each HV transistor has silicided gate (57d) and non-silicided source and drain regions (64).