| 摘要 |
A semiconductor device and a manufacturing method thereof are provided to improve the reliability of the semiconductor device without the degradation of the product ratio, the rising of the fabrication price, and the introduction of the new test process. A semiconductor device comprises the N-well region(w1n) of n-type formed on the main surface(S1) of a p-silicon substrate(1); the N-type cathode region(nCa1) of n-type which is formed in a part of the N-well region and has the impurity concentration higher than the N-well region; the p-type guard ring region(pg) surrounding the n-type cathode region with annular; the anode conductor film(EA) electrically connected to the n-type cathode region and the p-type guard ring region; the n-type cathode conductive region(nCb) formed outside the p-type guard ring region; the cathode conductor film(EC) covering the n-type cathode conductive region, and electrically connected with the n-type cathode conductive region. |
