发明名称 |
Improvements relating to ion implantation |
摘要 |
This invention relates to a method of implanting ions in a substrate using an ion beam where instabilities in the ion beam may be present and to an ion implanter for use with such a method. This invention also relates to an ion source for generating an ion beam that can be switched off rapidly. In essence, the invention provides a method of implanting ions comprising switching off the ion beam when an instability has been detected whilst continuing motion of the substrate relative to the ion beam to leave an unimplanted portion of a scan line across the substrate, establishing a stable ion beam once more and finishing the scan line by implanting the unimplanted portion of the path. |
申请公布号 |
GB2432039(B) |
申请公布日期 |
2009.03.11 |
申请号 |
GB20070000008 |
申请日期 |
2004.01.09 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
MAJEED ALI FOAD;BERNARD FRANCIS HARRISON;MARVIN FARLEY;PETER KINDERSLEY;STEPHEN WELLS;GEOFFREY RYDING;TAKAO SAKASE |
分类号 |
H01J37/304;H01L21/265;G21K5/10;H01J37/302;H01J37/317;H01L21/425;H01L21/66 |
主分类号 |
H01J37/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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