IMAGE SENSOR AND METHOD OF FABRICATING THE SAME

摘要

An image sensor and a manufacturing method thereof are provided to prevent the etching damage of the photodiode surface by forming the upper body of the pattern for the photo diode protection with the silicon nitride film. An image sensor comprises photodiodes(112,114) which are formed within a substrate(101), and accumulate the photo-charge; a floating diffusion area(120) detecting the photo-charge accumulated in the photo diode; a transfer gate(130) delivering the photo-charge accumulated in the photo diode to the floating diffusion area; a pattern(220a) for the photodiode protection which is extended to one side wall and the upper side of the transfer gate conformably; the first spacer(220b) formed in the other sidewall of the transfer gate; the second spacers(240a,240b) formed in the pattern for the photodiode protection.