| 摘要 |
A manufacturing method of a semiconductor device is provided to reduce the TNT(Turn Around Time) of device and the number of processes. A manufacturing method of a semiconductor device includes the step of forming a conductive film(104) on the upper part of a semiconductor substrate(100); the step of making the hard mask film(108) at the peripheral circuit region thinner than the cell region on the conductive film; the step of etching the hard mask film of the element isolation region, and the conductive film, and the semiconductor substrate; the step of forming a trench(118) of the different depth in the cell region and peripheral circuit region.
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