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发明名称
SEMICONDUCTOR HAVING IMPROVED GATE-TO-DRAIN BREAKDOWN VOLTAGE
摘要
申请公布号
EP2033210(A2)
申请公布日期
2009.03.11
申请号
EP20070809250
申请日期
2007.05.31
申请人
NORTHROP GRUMMAN SYSTEMS CORPORATION
发明人
CHEN, LI-SHU;VELIADIS, VICTOR
分类号
H01L21/00;H01L27/10;H01L29/80
主分类号
H01L21/00
代理机构
代理人
主权项
地址
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