| 摘要 |
A reservoir capacitor in a semiconductor device and a method for forming the same are provided to increase capacity of the reservoir capacitor by forming the reservoir capacitor with the dually stacked structure and connecting the reservoir capacitor in parallel. A first reservoir capacitor is composed of a semiconductor substrate(20), a first gate oxide layer(21), and a first gate electrode(22). A second reservoir capacitor is composed of the first gate electrode, a second gate oxide layer(23), and a second gate electrode(24). The first reservoir capacitor is connected in parallel to the second reservoir capacitor. The semiconductor substrate acts on one electrode of the first reservoir capacitor. The first gate electrode acts on other electrode of the first reservoir capacitor and the second reservoir capacitor. The second gate electrode acts on one electrode of the second reservoir capacitor.
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