| 摘要 |
<p>A manufacturing method of a semiconductor device is provided to prevent the attack of the semiconductor substrate and suppress the bridge caused by the word line pattern fault by forming an etch stopping layer. A manufacturing method of a semiconductor device includes the step of forming conductive films(104,108) on a semiconductor substrate(100); the step of forming a metal layer(110) on the conductive film; the step of performing the first etching process until the conductive film of the first area is exposed; the step of performing the second etching process to expose the conductive film of the second area; the step of removing an etch blockade layer(124); the step of forming the conductive layer pattern by removing the exposed region of the conductive film.</p> |
