| 摘要 |
<p>A semiconductor device and a manufacturing method thereof are provided to improve a process failure caused by the dependency of the pattern in a CMP process or an etching process by using a dummy pattern with the same size in a plane and forming the dummy pattern with the different size in a three dimensional structure. A device pattern(100) is formed on a substrate(50). A plurality of dummy patterns(200) are formed in one side of the device pattern. The dummy pattern has the same size in a plane and the different size in a vertical side. The device pattern is an element isolation pattern. The dummy pattern has a first dummy pattern with a first depth and a second dummy pattern(220) with a second depth deeper than the first depth.</p> |
