发明名称 MEMORY SYSTEM CAPABLE OF STORING MULTI-BIT DATA AND ITS READ METHOD
摘要 A memory system having memory cells capable of storing multi bit data and a reading method thereof are provided to secure a reading margin by correcting data according to a program state of a memory cell. A non volatile memory device(1100) has memory cells for storing multi bit data. A memory controller(1200) controls the non volatile memory device. The memory controller is based on data read from memory cells adjacent to a selected memory cell in a reading operation, and determines whether or not a state of the data read from the selected memory cell is changed into a different state when peripheral memory cells are programmed. The memory controller corrects the data read from the selected memory cell according to a determined result.
申请公布号 KR20090025631(A) 申请公布日期 2009.03.11
申请号 KR20070090618 申请日期 2007.09.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, SEUNG JAE;KANG, DONG KU;SONG, SEUNG HWAN;KONG, JUN JIN;CHAE, DONG HYUK;PARK, SUNG CHUNG
分类号 G11C16/34;G11C16/10;G11C16/26 主分类号 G11C16/34
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