| 摘要 |
A wafer edge etch apparatus and a method of wafer edge etch using the same are provided to prevent the backside of wafer from being etched excessively. A wafer edge etch apparatus comprises a chamber(100) receiving a wafer; first electrode(110) which is installed adjacent to the wafer front side; an RF power(140) for applying the RF power generating the plasma to the first electrode; the second electrode(120) which is installed adjacent to the wafer front side; the third electrode(130) in which the third side wall is formed along the edge of the wafer backside, and settling the wafer on the top; an up and down movement part(134) for moving the third electrode to top and bottom.
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