发明名称 CVD reactor comprising a gas ring
摘要 <p>A process gas is provided to a reactor volume of a semiconductor processing reactor through gas injector ports (120) of a gas ring (106). The process gas flows horizontally from the gas injector ports across a principal surface of a rotating susceptor (108) to exhaust ports (122) of the gas ring. The spent process gas is removed from the reactor volume through the exhaust ports (122). </p>
申请公布号 EP1780302(A3) 申请公布日期 2009.03.11
申请号 EP20060119741 申请日期 2006.08.29
申请人 MOORE EPITAXIAL, INC. 发明人 NISHIKAWA, KATSUHITO;MOORE, GARY M.;INLGES, AARON DAVID
分类号 C23C16/44;C23C16/455 主分类号 C23C16/44
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