发明名称 |
CVD reactor comprising a gas ring |
摘要 |
<p>A process gas is provided to a reactor volume of a semiconductor processing reactor through gas injector ports (120) of a gas ring (106). The process gas flows horizontally from the gas injector ports across a principal surface of a rotating susceptor (108) to exhaust ports (122) of the gas ring. The spent process gas is removed from the reactor volume through the exhaust ports (122).
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申请公布号 |
EP1780302(A3) |
申请公布日期 |
2009.03.11 |
申请号 |
EP20060119741 |
申请日期 |
2006.08.29 |
申请人 |
MOORE EPITAXIAL, INC. |
发明人 |
NISHIKAWA, KATSUHITO;MOORE, GARY M.;INLGES, AARON DAVID |
分类号 |
C23C16/44;C23C16/455 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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