发明名称 COMPOSIT MATRIX COMPRISING THIN MEMBRANE OF INORGANIC OXIDE AND METHOD OF MANUFACTURING THE SAME
摘要 A complex matrix made of a thin film of an inorganic oxide and a manufacturing method thereof are provided to offer superior adhesive force between the inorganic oxide of thin film and a silicon wafer by forming a single layer of the inorganic oxide of thin film or a multilayer of the thin film. A manufacturing method for a complex matrix made of a thin film of an inorganic oxide comprises the following steps of: performing a sintering process after performing a first electric radiation process of a sol for radiating on a surface of a silicon water; forming an inorganic oxide thin film on the water; and performing the sintering process after performing a second electric radiation process of a sol different with the first used sol on the inorganic oxide thin film formed on a surface of another silicon wafer repeatedly. The inorganic oxide contained in the inorganic oxide thin film is one selected from a particle or fiber of which diameter is 1,000nm or less.
申请公布号 KR20090025557(A) 申请公布日期 2009.03.11
申请号 KR20070090501 申请日期 2007.09.06
申请人 INDUSTRIAL COOPERATION FOUNDATION CHONBUK NATIONAL UNIVERSITY 发明人 KIM, HAK YONG;ARYL SANTOSH
分类号 B05D7/00;B05D3/02;B05D5/12;B32B18/00 主分类号 B05D7/00
代理机构 代理人
主权项
地址