| 摘要 |
A manufacturing method of semiconductor device and a substrate processing apparatus are provided to suppress the oxidation of the metallic foil by functioning the metal oxide layer formed in advance as a barrier. A manufacturing method of semiconductor device includes the step for forming the metal oxide layer containing element more than one kind under the first temperature on a substrate(200) having the metallic foil in the surface; the step for forming the metal oxide layer including at least one kind of element on the metal oxide layer to the target film thickness under the second temperature. The element forming the metal oxide layer formed under the first temperature selected from hafnium, yttrium, lanthanum, aluminum, zirconium, strontium, titanium, barium, tantalum, and niobium.
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