发明名称 CIRCUIT FOR CONTROLLING DATA OUTPUT DRIVER OF SEMICONDUCTOR MEMORY APPARATUS
摘要 A circuit for controlling a data output driver of a semiconductor memory device is provided to prevent a variation of a frequency property according to an output voltage by using a MOS(Metal Oxide Semiconductor) transistor of the same current and the same size. A driver unit control signal generating part(300) includes a plurality of control signal generating parts. A plurality of control signal generating parts receives a test signal, and outputs a driver unit control signal according to a fuse cutting. A first driver(400) commonly receives a first data signal, controls an activation in response to the driver unit control signal, includes a plurality of driver units, drives the first data signal, and outputs the first data signal to a common node. A signal combination part(500) receives the driver unit control signal and an enable signal, and outputs a first driver control signal. A second driver(600) commonly receives a second data signal, controls an activation in response to the first driver control signal, includes a plurality of first drivers, drives the second data signal, and outputs the second data signal to the common node.
申请公布号 KR20090025735(A) 申请公布日期 2009.03.11
申请号 KR20070090813 申请日期 2007.09.07
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHOI, HAE RANG;PARK, KUN WOO;KIM, YONG JU;SONG, HEE WOONG;OH, IC SU;KIM, HYUNG SOO;HWANG, TAE JIN;LEE, JI WANG
分类号 G11C7/10;G11C29/00 主分类号 G11C7/10
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