摘要 |
A circuit for controlling a data output driver of a semiconductor memory device is provided to prevent a variation of a frequency property according to an output voltage by using a MOS(Metal Oxide Semiconductor) transistor of the same current and the same size. A driver unit control signal generating part(300) includes a plurality of control signal generating parts. A plurality of control signal generating parts receives a test signal, and outputs a driver unit control signal according to a fuse cutting. A first driver(400) commonly receives a first data signal, controls an activation in response to the driver unit control signal, includes a plurality of driver units, drives the first data signal, and outputs the first data signal to a common node. A signal combination part(500) receives the driver unit control signal and an enable signal, and outputs a first driver control signal. A second driver(600) commonly receives a second data signal, controls an activation in response to the first driver control signal, includes a plurality of first drivers, drives the second data signal, and outputs the second data signal to the common node.
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申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
CHOI, HAE RANG;PARK, KUN WOO;KIM, YONG JU;SONG, HEE WOONG;OH, IC SU;KIM, HYUNG SOO;HWANG, TAE JIN;LEE, JI WANG |