| 摘要 |
<p>An image sensor and a method for manufacturing the same are provided to block or reflect the incident light through a micro lens by forming a light shielding metal wall in the outside of a photodiode. Transistors are formed in a pixel region and a peripheral circuit region of a semiconductor substrate(202). A photo diode(206) is formed in one side of a transistor in a pixel region. A light shielding metal wall(218a,224a,230a) is formed on the pixel region. The light shielding metal wall exposes the photo diode.</p> |
