发明名称 |
Method of fabricating semiconductor memory device |
摘要 |
In a semiconductor memory device and a method of fabricating the same, a semiconductor memory device having a transistor and a data storing portion includes a heating portion interposed between the transistor and the data storing portion and a metal interconnection layer connected to the data storing portion, wherein the data storing portion includes a chalcogenide material layer, which undergoes a phase change due to a heating of the heating portion, for storing data therein.
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申请公布号 |
US7501307(B2) |
申请公布日期 |
2009.03.10 |
申请号 |
US20070650972 |
申请日期 |
2007.01.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JUNG-HYUN;PARK YOUNG-SOO;LEE WON-TAE |
分类号 |
H01L21/00;H01L27/105;H01L27/10;H01L27/24;H01L45/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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