发明名称 Memory replacement mechanism in semiconductor device
摘要 A semiconductor device has a processor, a first memory unit accessed by the processor, a plurality of page memory units obtained by partitioning a second memory unit which is accessible by the processor at a speed higher than the speed at which the first memory unit is accessible such that each of the page memory units has a storage capacity larger than the memory capacity of a line composing a cache memory, a tag adding, to each of the page memory units, tag information indicative of an address value in the first memory unit and priority information indicative of a replacement priority, a tag comparator for comparing, upon receipt of an access request from the processor, the address value in the first memory unit with the tag information held by the tag, and a replacement control unit for replacing the respective contents of the page memory units.
申请公布号 US7502901(B2) 申请公布日期 2009.03.10
申请号 US20030735917 申请日期 2003.12.16
申请人 PANASONIC CORPORATION 发明人 KOGA YOSHIHIRO;KURODA MANABU;ASAI NOBORU;FUNAHASHI KAZUTOSHI
分类号 G06F12/00;G06F12/12 主分类号 G06F12/00
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