| 摘要 |
A doping method includes implanting first impurity ions into a semiconductor substrate, so as to form a damaged region in the vicinity of a surface of the semiconductor substrate, the first impurity ions not contributing to electric conductivity; implanting second impurity ions into the semiconductor substrate through the damaged region, the second impurity ions having an atomic weight larger than the first impurity ions and contributing to the electric conductivity; and heating the surface of the semiconductor substrate with a light having a pulse width of about 0.1 ms to about 100 ms, so as to activate the second impurity ions.
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