发明名称 |
Semiconductor device and method of manufacturing thereof |
摘要 |
The manufacturing method of a semiconductor device according to the present invention comprises steps of forming a metal film, an insulating film, and an amorphous semiconductor film in sequence over a first substrate; crystallizing the metal film and the amorphous semiconductor film; forming a first semiconductor element by using the crystallized semiconductor film as an active region; attaching a support to the first semiconductor element by using an adhesive; causing separation between the metal film and the insulating film; attaching a second substrate to the separated insulating film; separating the support by removing the adhesive; forming an amorphous semiconductor film over the first semiconductor element; and forming a second semiconductor element using the amorphous semiconductor film as an active region.
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申请公布号 |
US7501306(B2) |
申请公布日期 |
2009.03.10 |
申请号 |
US20060523642 |
申请日期 |
2006.09.20 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
NISHI KAZUO;TAKAYAMA TORU;GOTO YUUGO |
分类号 |
H01L21/00;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L27/144;H01L29/786 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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