SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING METAL GATE OF THE SEMICONDUCTOR DEVICE

摘要

A semiconductor device is provided to easily control the work function of the metal gate of the semiconductor device. A semiconductor device comprises gate insulating layers (19,21) and metal gates(20,22) formed on the gate insulating layer. The metal gate includes the mixture of the metal carbide and the metal-nitride. The work function of the metal gate is determined by the rate of the metal-nitride within the metal gate and the metal carbide. The metal-nitride is TiN. The metal carbide is TiC.