发明名称 |
Device having high aspect-ratio via structure in low-dielectric material and method for manufacturing the same |
摘要 |
A method for manufacturing a device having a via structure includes the following steps. A seed metallic layer is formed on a substrate. A patterned metallic-trace layer is formed on the seed metallic layer. A positive-type photoresist layer is formed on the patterned metallic-trace layer and seed metallic layer. The photoresist layer is patterned for defining a through hole which exposes a part of the patterned metallic-trace layer, wherein the through hole has a high aspect ratio. A metallic material is electroplated in the through hole so as to form a metallic pillar. The photoresist layer is removed. A part of the seed metallic layer is etched, whereby traces of the patterned metallic-trace layer are electrically isolated from each other. A dielectric material layer is formed on the substrate for sealing the patterned metallic-trace layer and a part of the metallic pillar and exposing a top surface of the metallic pillar.
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申请公布号 |
US7501342(B2) |
申请公布日期 |
2009.03.10 |
申请号 |
US20080050601 |
申请日期 |
2008.03.18 |
申请人 |
ADVANCED SEMICONDUCTOR ENGINEERING, INC. |
发明人 |
WANG WEI CHUNG;CHENG PO JEN;YANG HSUEH AN;CHEN PEI CHUN |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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