| 摘要 |
There is provided a solid-state imaging device capable of achieving both of a wide dynamic range and a high low-illuminance sensitivity. A photodiode and a first transistor are provided in series between the ground and a drain of each of pixels, and a signal corresponding to a current or electric charge generated in the photodiode in accordance with an optical input is outputted from a detection node located between the photodiode and the first transistor. A control part executes control to alternately repeat a logarithmic operation period during which a photoelectric conversion signal logarithmically converted by setting a gate voltage phiR of the first transistor to a first level is obtained and a linear operation period during which a linear type photoelectric conversion signal is obtained by setting the gate voltage phiR of the first transistor to a second level.
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