| 摘要 |
A memory device includes a memory element, a first wiring and a second wiring. The memory element includes a memory layer retaining information based on a magnetization state of a magnetic material and a magnetization pinned layer in which a magnetization direction is pinned and which is provided for the memory layer through a non-magnetic layer, in which current flows in a stacking direction to change a magnetization direction of the memory layer. The first wiring supplies current flowing in the stacking direction of the memory element, and the second wiring supplies current to apply a current magnetic field to the memory element. When information is recorded in the memory device, a first pulse current is supplied to the first wiring, a second pulse current is supplied to the second wiring, and the second pulse current falls at least 10 picoseconds after the first pulse current falls.
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