发明名称 |
Etching solution comprising hydrofluoric acid |
摘要 |
This invention relates to etching solutions which comprise hydrofluoric acid and organic solvents for use in the process for the production of integrated circuits. The etching solutions according to the invention are particularly suitable for the selective etching of doped silicate layers.
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申请公布号 |
US7501072(B2) |
申请公布日期 |
2009.03.10 |
申请号 |
US20070730480 |
申请日期 |
2007.04.02 |
申请人 |
BASF AKTIENGESELLSCHAFT |
发明人 |
WIEGAND CLAUDIA;RHEIN RUDOLF;TEMPEL EBERHARD |
分类号 |
C09K13/08;H01L21/302;H01L21/308;H01L21/311 |
主分类号 |
C09K13/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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