发明名称 |
Phase-change memory device and method of writing a phase-change memory device |
摘要 |
A phase-change cell memory device includes a plurality of phase-change memory cells, an address circuit, a write driver, and a write driver control circuit. The phase-change memory cells each include a volume of material that is programmable between amorphous and crystalline states. The address circuit selects at least one of the memory cells, and the write driver generates a reset pulse current to program a memory cell selected by the address circuit into the amorphous state, and a set pulse current to program the memory cell selected by the address circuit into the crystalline state. The write driver control circuit varies at least one of a pulse width and a pulse count of at least one of the reset and set pulse currents according to a load between the write driver and the memory cell selected by the address circuit.
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申请公布号 |
US7502251(B2) |
申请公布日期 |
2009.03.10 |
申请号 |
US20060502563 |
申请日期 |
2006.08.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI BYUNG-GIL;KWAK CHOONG-KEUN;KIM DU-EUNG;CHO BEAK-HYUNG |
分类号 |
G11C11/00;G11C13/00;G11C7/00;G11C16/02;G11C16/10 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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