发明名称 Method of protecting semiconductor wafer and adhesive film for protection of semiconductor wafer
摘要 A protecting method for a semiconductor wafer in a step of processing a semiconductor wafer which involves a first step of adhering an adhesive film for protection of a semiconductor wafer in which an adhesive layer is formed on one surface of a base film to a circuit-formed surface of the semiconductor wafer, a second step of heating the semiconductor wafer to which the adhesive film for protection of the semiconductor wafer is adhered, a third step of processing a non-circuit-formed surface of the semiconductor wafer by fixing the semiconductor wafer to which the adhesive film for protection of the semiconductor wafer is adhered on a grinding machine or an abrasive machine, and a fourth step of peeling the adhesive film for protection of the semiconductor wafer from the semiconductor wafer. The method addresses warpage problems and can prevent breakage of wafers during conveyance even if the thickness of a wafer is reduced to approximately 150 mum or less.
申请公布号 US7501312(B2) 申请公布日期 2009.03.10
申请号 US20050051625 申请日期 2005.01.27
申请人 MITSUI CHEMICALS, INC. 发明人 KOSHIMIZU TAKANOBU;KATAOKA MAKOTO;MIYAKAWA MASAFUMI;FUKUMOTO HIDEKI;SAIMOTO YOSHIHISA
分类号 H01L21/00;H01L21/304;C09J7/02;G06K19/077;H01L21/30;H01L21/302;H01L21/44;H01L21/461;H01L21/50;H01L21/68 主分类号 H01L21/00
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