| 摘要 |
<p>A modeling method and an apparatus of a MOSFET(Metal Oxide Semiconductor Field Effect Transistor) are provided to verify various worst cases and best cases by one modeling and a simulation. A modeling apparatus(100) receives program commands and user inputs, and outputs results corresponding to the commands and the inputs. A central processing unit(101) is contacted in RAM/ROM(102), a clock(104), a data storage device(106), an input device(108), and an output device(110). The input device is used in order to communicate the modeling apparatus with information through one among a different computer system or the user inputs. The output device is used in order to communicate the commands with the results by the modeling apparatus. A program(107) includes a plurality of processing commands.</p> |
