发明名称 |
Antireflective coating for semiconductor devices and method for the same |
摘要 |
According to one embodiment of the present invention, a semiconductor device includes a first layer of dielectric material disposed upon an upper surface of a substrate of a semiconductor device and a first non-conductive layer of metal disposed upon an upper surface of the dielectric material. The first layer of dielectric material and the first non-conductive layer of metal act as an optical trap for electromagnetic radiation received by the first non-conductive layer of metal. In particular embodiments, the semiconductor device may further comprise a second layer of dielectric material disposed upon an upper surface of the first non-conductive layer of metal and a second non-conductive layer of metal disposed upon an upper surface of the second layer of dielectric material.
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申请公布号 |
US7502155(B2) |
申请公布日期 |
2009.03.10 |
申请号 |
US20050080727 |
申请日期 |
2005.03.15 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
SUDAK PAUL G.;ADAMS ROBERT L.;NEIDRICH JASON M.;JACOBS SIMON JOSHUA;WESNESKI LISA ANN;WILLS LINDA M.;CARTER WILLIAM D.;FREDERIC JUDITH C. |
分类号 |
G02F1/03;G02B26/00;G02B26/08;G02F1/07;G02F1/29 |
主分类号 |
G02F1/03 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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