发明名称 Asymmetric memory cell
摘要 Some embodiments provide a memory cell that includes a body region, a source region and a drain region. The body region is doped with charge carriers of a first type, the source region is disposed in the body region and doped with charge carriers of a second type, and the drain region is disposed in the body region and doped with charge carriers of the second type. The body region and the source region form a first junction, the body region and the drain region form a second junction, and a conductivity of the first junction from the body region to the source region in a case that the first junction is unbiased is substantially less than a conductivity of the second junction from the body region to the drain region in a case that the second junction is unbiased.
申请公布号 US7501316(B2) 申请公布日期 2009.03.10
申请号 US20050268098 申请日期 2005.11.07
申请人 INTEL CORPORATION 发明人 KESHAVARZI ALI;TANG STEPHEN H.;SOMASEKHAR DINESH;PAILLET FABRICE;KHELLAH MUHAMMAD M.;YE YIBIN;LU SHIH-LIEN L.;DE VIVEK K.
分类号 H01L21/82;G11C11/404;H01L21/8239;H01L27/10;H01L27/105;H01L27/108;H01L29/78 主分类号 H01L21/82
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