| 摘要 |
A semiconductor memory device is provided to improve productivity and a device reliability by designing an input/output switch circuit of a whole sub hole region into the same pattern. A first local input/output line(LIOD) and a second local input/output line(LIOBD) correspond to a segment input/output line(SIO, SIOB). An input/output switching part(501A) selectively connects the segment input/output line to the first local input/output line in response to a first switch control signal. A dummy input/output switching part(501C) is connected to the second local input/output line. The segment input/output line, the first local input/output line, and the second local input/output line are a differential line having a positive line and a negative line. |
