发明名称 SURFACE TREATMENT METHOD OF WAFER BY USING FLOATING ZONE PROCESS AND SURFACE TREATMENT APPARATUS FOR THE SAME
摘要 A surface treatment method of wafer by using floating zone process and surface treatment apparatus for the same are provided to improve the flatness of the surface by recrystallizing the polished wafer. The wafer(1) is positioned in the susceptor(101) equipped inside the chamber(100). The molten layer is formed by supplying the heat radiant energy to the surface of wafer. The heating source(104) is fixed on the top of the inside of chamber. The heating source comprises a plurality of halogen lamps which is dispersedly arranged at the protrusion type and supplies the heat radiant energy. The cooling source is contacted with the susceptor to cool the susceptor body. The susceptor is fixed to the lift device(102) installed at the inside of chamber.
申请公布号 KR20090024608(A) 申请公布日期 2009.03.09
申请号 KR20080006466 申请日期 2008.01.22
申请人 SILTRON INC. 发明人 LEE, JUNG HUN;OH, HYUN JUNG;KIM, YOUNG HUN
分类号 H01L21/304;H01L21/02 主分类号 H01L21/304
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