发明名称 QUARTZ CRUCIBLE FOR HIGH YIELD GROWER OF SINGLE CRYSTAL AND FABRICATION METHOD THEREOF
摘要 A quartz crucible for high yield grower of single crystal and fabrication method thereof are provided to suppress the generation of open bubble and the generation of the glass elution surface at the surface of the crucible. The micro bubble does not exist from the inner surface of the transparent innerlayer(11) to 0.5mm depth. The uncertain external layer(10) surrounds the outside of innerlayer. The accommodation space is formed in the innerlayer. The thickness of innerlayer is 1~2mm. The concentration of the micro bubble is zero from the inner surface to 0.5mm depth in the formation of innerlayer. The innerlayer is comprised of the synthesis layer or the nature layer.
申请公布号 KR20090024519(A) 申请公布日期 2009.03.09
申请号 KR20070089581 申请日期 2007.09.04
申请人 SILTRON INC. 发明人 SIM, BOK CHEOL;JUNG YO HAN;LEE, HONG WOO
分类号 C30B15/10 主分类号 C30B15/10
代理机构 代理人
主权项
地址