发明名称 |
Production method for semiconductor device |
摘要 |
An object of the present invention is to provide a method of producing a Group III nitride semiconductor device having a chip form which is pentagonal or more highly polygonal maintaining good area efficiency and at a low cost. The inventive method of producing a Group III nitride semiconductor device having a chip shape which is a pentagonal or more highly polygonal shape comprises a first step of epitaxially growing a Group III nitride semiconductor on a substrate to form a semiconductor wafer; a second step of irradiating said semiconductor wafer with a laser beam to form separation grooves; a third step of grinding and/or polishing the main surface side differently from the epitaxially grown main surface of the substrate; and a fourth step of division into individual chips by applying stress to said separation grooves.
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申请公布号 |
US7498184(B2) |
申请公布日期 |
2009.03.03 |
申请号 |
US20050580107 |
申请日期 |
2005.10.05 |
申请人 |
SHOWA DENKO K.K. |
发明人 |
YAKUSHIJI KENJI;KUSUNOKI KATSUKI;MIKI HISAYUKI |
分类号 |
H01L21/00;H01L33/00;H01L33/20 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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