发明名称 |
Semiconductor multilayer wiring board and method of forming the same |
摘要 |
A silica-based interlayer insulating layer having a low dielectric constant is formed with SOG material on a substrate, in which a wiring-layer forming space is then formed. If necessary, a UV ray irradiation is performed under an oxidizing atmosphere. A Si-OH bond is formed on a surface of the insulating layer. A monomolecular layer film is then adhered to the inner surface of the space, which is then modified to be a catalyst with a solution containing Pd compound. On the catalyst monomolecular layer, a copper-diffusion-resistant film is formed by electroless plating, on which a copper plate is then formed as a wiring layer.
|
申请公布号 |
US7498520(B2) |
申请公布日期 |
2009.03.03 |
申请号 |
US20040965868 |
申请日期 |
2004.10.18 |
申请人 |
WASEDA UNIVERSITY;TOKYO OHKA KOGYO CO., LTD. |
发明人 |
OSAKA TETSUYA;YOKOSHIMA TOKIHIKO;SATO ISAO;HASHIMOTO AKIRA;HAGIWARA YOSHIO |
分类号 |
C23C18/16;H05K3/02;C23C18/20;C23C18/40;C25D7/12;H01L21/316;H01L21/3205;H01L21/4763;H01L21/768;H01L23/52;H05K1/00;H05K3/38;H05K3/46 |
主分类号 |
C23C18/16 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|