发明名称 |
Non-uniformly doped high voltage drain-extended transistor and method of manufacture thereof |
摘要 |
The present invention provides, in one embodiment, a transistor (100). The transistor (100) comprises a doped semiconductor substrate (105) and a gate structure (110) over the semiconductor substrate (105), the gate structure (110) having a gate corner (125). The transistor (100) also includes a drain-extended well (115) surrounded by the doped semiconductor substrate (105). The drain-extended well (115) has an opposite dopant type as the doped semiconductor substrate (105). The drain-extended well (115) also has a low-doped region (145) between high-doped regions (150), wherein an edge of the low-doped region (155) is substantially coincident with a perimeter (140) defined by the gate corner (125). Other embodiments of the present invention include a method of manufacturing a transistor (200) and an integrated circuit (300).
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申请公布号 |
US7498652(B2) |
申请公布日期 |
2009.03.03 |
申请号 |
US20040832009 |
申请日期 |
2004.04.26 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
PAN SHANJEN;PENDHARKAR SAMEER;TODD JAMES R. |
分类号 |
H01L21/8234;H01L29/93;H01L21/266;H01L21/336;H01L27/06;H01L27/088;H01L29/06;H01L29/08;H01L29/36;H01L29/423;H01L29/76;H01L29/78 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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