发明名称 |
Sacrificial surfactanated pre-wet for defect reduction in a semiconductor photolithography developing process |
摘要 |
A method for developing a resist on a substrate in which a sacrificial surfactant-containing liquid is first applied to a resist as a pretreatment to reduce developing process defects and to improve the development process time and the uniformity of the resist. The pretreatment is followed by supplying a developing solution to the resist and thereafter developing the resist.
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申请公布号 |
US7498124(B2) |
申请公布日期 |
2009.03.03 |
申请号 |
US20030675419 |
申请日期 |
2003.09.30 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KULP JOHN M. |
分类号 |
G03C5/00;B08B9/04;G03D3/00;G03F7/30;G03F7/32 |
主分类号 |
G03C5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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