发明名称 Sacrificial surfactanated pre-wet for defect reduction in a semiconductor photolithography developing process
摘要 A method for developing a resist on a substrate in which a sacrificial surfactant-containing liquid is first applied to a resist as a pretreatment to reduce developing process defects and to improve the development process time and the uniformity of the resist. The pretreatment is followed by supplying a developing solution to the resist and thereafter developing the resist.
申请公布号 US7498124(B2) 申请公布日期 2009.03.03
申请号 US20030675419 申请日期 2003.09.30
申请人 TOKYO ELECTRON LIMITED 发明人 KULP JOHN M.
分类号 G03C5/00;B08B9/04;G03D3/00;G03F7/30;G03F7/32 主分类号 G03C5/00
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