发明名称 Terahertz radiation sources and methods
摘要 The invention relates to improved terahertz radiation sources and associated methods. A terahertz radiation source is described, comprising: an emitter (202) comprising a semiconductor material (12); a pair of electrodes (204a,b) adjacent a face of said semiconductor, said pair of electrodes defining a gap between said electrodes; a pulsed light source input for illuminating said semiconductor to excite photo-carriers in said semiconductor to generate terahertz radiation; and a radiation collector (212) to collect said terahertz radiation; and wherein said radiation collector is disposed on the same side of said semiconductor as said electrodes. A related method of providing terahertz radiation is also described.
申请公布号 US7498593(B2) 申请公布日期 2009.03.03
申请号 US20040550620 申请日期 2004.03.24
申请人 CAMBRIDGE UNIVERSITY TECHNICAL SERVICES LIMITED 发明人 SHEN YAO-CHUN;LINFIELD EDMUND H.;DAVIES ALEXANDER G.
分类号 A61N5/06;G01J3/10;G01N21/00;G01N21/35;H01L33/00;H01Q1/00;H01Q3/26;H01Q9/28;H01Q19/10;H05G2/00 主分类号 A61N5/06
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