| 摘要 |
THE INVENTION PROVIDES A METHOD OF CHEMICALLY-MECHANICALLY POLISHING A SUBSTRATE COMPRISING TUNGSTEN THROUGH USE OF A COMPOSITION COMPRISING A TUNGSTEN ETCHANT, AN INHIBITOR OF TUNGSTEN ETCHING, AND WATER, WHEREIN THE INHIBITOR OF TUNGSTEN POLISHING IS A POLYMER, COPOLYMER, OR POLYMER BLEND COMPRISING AT LEAST ONE REPEATING GROUP COMPRISING AT LEAST ONE NITROGEN-CONTAINING HETEROCYCLIC RING OR A TERTIARY OR QUATERNARY NITROGEN ATOM. THE INVENTION FURTHER PROVIDES A CHEMICAL-MECHANICAL POLISHING COMPOSITION PARTICULARLY USEFUL IN POLISHING TUNGSTEN-CONTAINING SUBSTRATES.
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