Transistor e.g. MOSFET, forming method, involves forming catalyst layer, extending nanometric linear conductors from catalyst layer, and depositing encapsulation layer that covers transistor and linear conductors

摘要

The method involves forming a catalyst e.g. silicide, layer (4) on a contact zone of an electrode, where the contact zone is formed by placing a masking layer ahead or behind the catalyst layer. Nanometric linear conductors (6) e.g. nanotubes or nanowires, are extended from the catalyst layer. An encapsulation layer (7) covering a transistor and linear conductors is deposited. An upper end of the linear conductors is released by mechano-chemical polishing.