| 摘要 |
A nitride semiconductor light-emitting device having an improved efficiency of carrier injection from a p-type nitride semiconductor layer into an active layer by simple means from a point of view quite different from conventional techniques. On a sapphire substrate (1), a buffer layer (2), an undoped GaN layer (3), an n-type GaN contact layer (4), InGaN/GaN superlattice layer (5), an active layer (6), a first undoped InGaN layer (7), a second undoped InGaN layer (8), and a p-type GaN system contact layer (9) are formed. A p-electrode (10) is formed on the P-type GaN system contact layer (9). An n-electrode (11) is formed on the surface where the n-type GaN contact layer (4) is exposed by mesa-etching.The first undoped InGaN layer (7) is in contact with the well layer nearest to the p-side of the active layer having a quantum well structure. The second undoped InGaN layer (8) is provided on the first undoped InGaN layer (7). Since the total thickness of the first and second undoped InGaN layers is 20 nm or less, the efficiency of carrier injection can be increased.
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