摘要 |
ACCORDING TO THIS PLASMA PROCESSING METHOD, A SURFACE OF A MICRO GAP PROVIDED BETWEEN A FIRST SUBJECT TO BE PROCESSED AND A SECOND SUBJECT TO BE PROCESSED IS PROCESSED. ACCORDING TO THIS PLASMA PROCESSING METHOD, THE FIRST AND SECOND SUBJECTS TO BE PROCESSED ARE DISPOSED WITHIN A PROCESS CHAMBER (1). THEN, THE PRESSURE INSIDE THE PROCESS CHAMBER (1) IS REDUCED, AND A MIXED GAS CONTAINING OXYGEN AND HELIUM IS INTRODUCED. IN ADDITION, IN THE PRESSURE-REDUCED PROCESS CHAMBER (1), PLASMA IS GENERATED SO AS TO PROCESS THE SURFACES OF THE FIRST AND SECOND SUBJECTS TO BE PROCESSED FACING EACH OTHER IN THE MICRO GAP. BY APPLYING THIS METHOD TO A WORKPIECE HAVING A CIRCUIT BOARD (4) AND AN ELECTRONIC COMPONENT (5) IN WHICH AN ELECTRODE ON THE CIRCUIT BOARD IS COUPLED WITH AN ELECTRODE ON THE ELECTRONIC COMPONENT (5), A SEALING RESIN IS EASILY FILLED IN BETWEEN THE CIRCUIT BOARD (4) AND THE COMPONENT. (FIGURE 1) |