SEMICONDUCTOR MEMORY DEVICE CAPABLE OF PROGRAMMING FOR BANKS SIMULTANEOUSLY AND METHOD THEREOF

摘要

A semiconductor memory device capable of programming simultaneously a plurality of banks and a method thereof are provided to improve a programming speed of a NOR flash memory device by programming simultaneously a plurality of banks by using data buffers corresponding to all or a part of the banks. A semiconductor memory device includes a memory cell array(120) and a plurality of data buffers(140-1~140-i). The memory cell array includes a plurality of banks(120-1~120-i). The data buffers are formed to store program data to be programmed in the banks.