发明名称 STATIC MEMORY ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a test device of a static memory element whose productivity is improved. SOLUTION: The test device includes a first test active region 210, a second test active region that is separated from the first test active region in the other direction and is extended in one direction, a plurality of test gate lines 230, a plurality of test contacts 240 that are adjacent to the test gate lines and are formed in the first and the second test active regions, a plurality of connection active regions 212 that electrically connect test contacts formed in the first test active region to test contacts formed in the second test active region in pairs, and a plurality of metal wires 270 that electrically connect two contacts adjacently formed in the first test active region or the second test active region, respectively, thereby forming an open contact chain that electrically connect the plurality of test contacts. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009044159(A) 申请公布日期 2009.02.26
申请号 JP20080205628 申请日期 2008.08.08
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 RI SENSEI;SHIN HONG-JAE
分类号 H01L21/66;H01L21/8244;H01L27/11 主分类号 H01L21/66
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